| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device having a two-transistor one-capacitor type memory cell whose data storage characteristic is high. <P>SOLUTION: An active region for forming the two transistors included in the memory cell is arranged in a slender shape, along a prescribed axis which intersects first and second bit lines at an angle smaller than 90°. As a result, a bonding area between the active region corresponding to connection nodes of the two transistors and a substrate is reduced, and a leakage current can be reduced. <P>COPYRIGHT: (C)2003,JPO |
