| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a magnetic switching element having an architecture of low power consumption, and an inexpensive magnetic memory of ultrahigh capacity in which high integration can be realized by employing the magnetic switching element. <P>SOLUTION: The magnetic switching element comprises a magnetic semiconductor layer (10) making a transition from paramagnetic state to ferromagnetic state upon application of a voltage, and a ferromagnetic layer (20) provided in proximity to the magnetic semiconductor layer while being bonded substantially in the direction of magnetization (M1) wherein magnetization (M2) is formed in the magnetic semiconductor layer depending on the direction of magnetization of the ferromagnetic layer upon application of a voltage to the magnetic semiconductor layer. The magnetic memory comprises two magnetic switching elements and performs writing for the recording layer of a magnetoresistive effect element. <P>COPYRIGHT: (C)2003,JPO</p> |
