| 摘要 |
PROBLEM TO BE SOLVED: To provide a variable wavelength distribution feedback laser apparatus having a new configuration where there are no mode jumps, a variable wavelength range is wide as compared with before, and at the same time a switching speed is high. SOLUTION: A variable wavelength semiconductor laser apparatus 10 has a variable wavelength element section 12 and a stimulation element section 14 for allowing a variable wavelength layer at the variable wavelength element section to be subjected to light stimulation on a common n-InP substrate 16. The variable wavelength element section has an n-InP lower clad layer 18, a variable wavelength layer 20, an i-InP layer 22, an active layer 24, a p-InP spacer layer 26, a p-diffraction grating 28, and a p-InP buried layer 30 on the substrate. The stimulation element section 14 has a common n-InP lower clad layer, an active layer 32 in common with a variable wavelength layer, and a common i-InP layer, and has a p-InP spacer layer 34, a p-diffraction grating 36, and a p-InP buried layer 38 on it. The upper section of a laminated structure is formed as a stripe-like ridge, is buried in an InP buried layer 39, and further has a p-InP upper clad layer 40 on it. The variable wavelength element section and excitation element section have an independent electrode structure each. COPYRIGHT: (C)2003,JPO
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