| 摘要 |
PROBLEM TO BE SOLVED: To enable a laser annealing process for a non-monocrystalline semiconductor film to be improved in effectiveness. SOLUTION: When a non-monocrystalline semiconductor film is irradiated with a laser beam, the surface of the non-monocrystalline semiconductor film is terminated by hydrogen, and the non-monocrystalline semiconductor film is irradiated with a laser beam in an oxygen-containing atmosphere. By this setup, a heat insulating layer of water vapor is formed on the surface of the semiconductor film when the semiconductor film is irradiated with a laser beam, so that an annealing operation can be effectively carried out. That is, this annealing method is capable of improving a semiconductor film more in crystallinity and uniformity and energy more in a utilization factor than all other conventional laser annealing techniques. COPYRIGHT: (C)2003,JPO
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