| 摘要 |
PROBLEM TO BE SOLVED: To provide a refresh-control device of a memory device in which internal-refresh can be performed after power-up sequence is finished and its control method. SOLUTION: The device is provided with a control circuit in which DRAM memory cells are used for a storage element, a refresh-control device of a memory device provided with a SRAM interface outputs a control signal having a second state in accordance with a power-up signal in a first period and outputs the control signal having a first state in accordance with the prescribed pulse inputted first after the first period elapses, and a refresh-pulse generating circuit outputting a pulse train for refreshing the DRAM memory cell in accordance with the control signal of the first state. The control circuit is provided with a first node, a first circuit pulling down the first node to a ground voltage level in accordance with the prescribed pulse, and a second circuit pulling up the first node to a power source voltage level in accordance with the prescribed pulse. The control signal is a reversed output signal of the first node. The prescribed pulse is the pulse generated in accordance with a read command or a write command. COPYRIGHT: (C)2003,JPO
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