| 摘要 |
PROBLEM TO BE SOLVED: To obtain superb reliability ranging from low output to high output by eliminating peeling in a semiconductor laser element having an end face protection film. SOLUTION: On one end face, an approximately 1 nm Si film (14a) is formed, the surface of the Si film (14a) is oxidized for forming a thin SiO<SB>x</SB>film (14b), and aλ/2 Al<SB>2</SB>O<SB>3</SB>film (14c) is formed on the SiO<SB>x</SB>film for forming a low reflection film 14. Contrarily, on the other at a opposite side, an approximately 1 nm Si film (14a) is formed, the surface of the Si film (14a) is oxidized for forming a thin SiO<SB>x</SB>film (14b), and the lamination structure of aλ/4 oxide is formed on the SiO<SB>x</SB>film for forming a high reflection film. The relation between the total film thickness d1 of the Si film of a first layer and the SiO<SB>x</SB>film of a second layer and SiO<SB>x</SB>film d2 of the second layer is 0.1≤d2/d1≤0.9. As a result, film peeling is prevented, and the maximum light output can be improved. COPYRIGHT: (C)2003,JPO
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