| 摘要 |
PROBLEM TO BE SOLVED: To maximize the mobility of holes in the channel layer of a p-channel type semiconductor device comprising a channel layer, a gate electrode formed the channel layer, a p-type source region formed on one side of the channel layer, and a p-type drain region formed on the other side of the channel layer wherein the band of heavy and light holes is broken up in the channel layer by an isotropic compressive strain being applied in the two-dimensional plane direction. SOLUTION: A channel connecting a p-type source region and a p-type drain region is set in the <100> direction or in the vicinity thereof so that the mobility of holes is maximized in the channel layer. COPYRIGHT: (C)2003,JPO
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