摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which can gain a low on-voltage characteristic without lowering manufacturing efficiency. SOLUTION: The manufacturing method comprises the process of forming an element on the back side of a semiconductor substrate 1, the process of bonding the back side of the semiconductor substrate 1 and a holding substrate 4, the process of thinning down the semiconductor substrate 1 from the surface, the process of forming an element on the surface side of the semiconductor substrate 1, and the process of removing the holding substrate 4. COPYRIGHT: (C)2003,JPO
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