发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which can gain a low on-voltage characteristic without lowering manufacturing efficiency. SOLUTION: The manufacturing method comprises the process of forming an element on the back side of a semiconductor substrate 1, the process of bonding the back side of the semiconductor substrate 1 and a holding substrate 4, the process of thinning down the semiconductor substrate 1 from the surface, the process of forming an element on the surface side of the semiconductor substrate 1, and the process of removing the holding substrate 4. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003197633(A) 申请公布日期 2003.07.11
申请号 JP20010393723 申请日期 2001.12.26
申请人 TOSHIBA CORP 发明人 MATSUDA TADASHI
分类号 H01L29/78;H01L21/336;H01L29/739;(IPC1-7):H01L21/336 主分类号 H01L29/78
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