| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having highly reliable wiring layers. SOLUTION: The manufacturing method comprises a process of forming the first wiring layer 30 with a predetermined pattern, a process of forming the second interlayer insulation layer 40 above the first wiring layer 30, a process of forming a sacrifice layer 50 above the second interlayer insulation layer 40, a process of forming a through-hole 60 in the second interlayer insulation layer 40 and the sacrifice layer 50, a process of forming an electrically conductive layer 72 which is a contact layer 70 in the through-hole 60, and a process of removing at least a part of the sacrifice layer 50 or the contact layer 70 in the through-hole 60 formed in the sacrifice layer 50. COPYRIGHT: (C)2003,JPO
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