| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for treating the periphery of a substrate which is capable of precisely controlling an etching width and of providing a good treatment even to a substrate formed with an orientation flat, and which has no special need to protect a device formation region with a pure water or the like. SOLUTION: The apparatus for treating the periphery of a substrate comprises a vacuum chuck 1 which holds and turns a wafer W nearly horizontally, and an optical etching apparatus 2 for irradiating laser light to remove a copper thin film from a peripheral part and a peripheral end face of the wafer W held by the vacuum chuck 1. When processing the wafer W, the wafer W is turned by means of the vacuum chuck 1. While the wafer W is turned, Xe laser light is irradiated on the peripheral part of the wafer W from the optical etching apparatus 2. At that time, the location of the optical etching apparatus 2 is adjusted according to the outer shape of the wafer W. COPYRIGHT: (C)2003,JPO
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