| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor module which has an improved dielectric strength and can be manufactured easily. <P>SOLUTION: The semiconductor module comprises a base element (1), an insulating element (2) which is metallized on both sides and rests on the base element by one of the two metallizations, and at least one semiconductor element (6) arranged on the other of the two metallizations. An electrically insulating layer (51) is arranged in the edge region of the insulating element (2), the edge region of this insulating element (2) forming a common planar surface with the surface of the second metallization. The blunting of the edges and corners of the metallization by level embedding of the insulating element having an entirely metalized surface improves the insulating property of the semiconductor module in the area of the critical electrical field region. Moreover, the arrangement in one plane permits simple and low-cost production. <P>COPYRIGHT: (C)2003,JPO |
