| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lateral MOSFET having a low ON voltage and a high breakdown voltage. <P>SOLUTION: The high breakdown voltage semiconductor element comprises an n-type semiconductor layer 31 formed on a silicon oxide film, a p-type well layer 24 formed selectively in the n-type semiconductor layer 31, an n-type source layer 25 formed selectively in the p-type well layer 24, an n-type drain layer 26 formed selectively in the n-type semiconductor layer 31, a gate electrode 30 provided on a p-type well layer 24 between the n-type drain layer 26 and the n-type source layer 25 through a gate insulation film, and a p-type semiconductor layer 32 formed selectively in the n-type semiconductor layer 31 between the p-type well layer 24 and the n-type drain layer 26 while decreasing the width gradually in the gate width direction from the p-type well layer 24 toward the n-type drain layer 26 and touching the p-type well layer 24. <P>COPYRIGHT: (C)2003,JPO |
