| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride-based compound semiconductor element that can be improved in light emitting efficiency and yield. <P>SOLUTION: In the gallium nitride-based compound semiconductor element, an Au electrode 9 is formed on the upper surface of a wafer provided with a gallium nitride-based compound semiconductor layer 4 having a p-n junction on the upper surface of a sapphire substrate 2. In addition, an Al/Si/Ni/Au electrode 10 is formed on the lower surface of the wafer so that the electrode 10 may come into contact with at least a part of the semiconductor layer 4 exposed by removing an arbitrary portion of the sapphire substrate 2 from the lower surface to the semiconductor layer 4. <P>COPYRIGHT: (C)2003,JPO |
