| 摘要 |
PROBLEM TO BE SOLVED: To provide a spherical semiconductor device in which an etching performance can be assured and to provide a method for manufacturing the same. SOLUTION: The spherical semiconductor device 11 comprises a spherical semiconductor 12, and an outer shell 13 for surrounding the periphery of the semiconductor 12. In this device 11, the shell 13 has an electrode 17, an insulating film 18, an electric circuit pattern 19, and a structure film 20 sequentially formed from its inside in such a manner that the film 20 is made of a synthetic resin and has many fine pores over the entire spherical surface. COPYRIGHT: (C)2003,JPO |
