| 摘要 |
PROBLEM TO BE SOLVED: To prevent a pattern shape from being changed during SEM measurement. SOLUTION: This method for measuring a resist pattern includes a step for applying a resist to a semiconductor substrate, a step for exposing the resist, a step for developing the resist to a resist pattern with a specified shape, a step for applying a plasma or an electron beam to the resist pattern, and a step for measuring the resist pattern by using a critical dimension measurement SEM or a scanning electron microscope type dimension measurement device. The resist pattern is measured after a plasma or an electron beam is applied, so that a change of pattern in dimension due to electron beam scanning for measurement can be prevented. COPYRIGHT: (C)2003,JPO |
