| 摘要 |
PROBLEM TO BE SOLVED: To improve the dependency on temperature and reduce the resistance of a semiconductor laser device having a compression strained InGaAsP active layer. SOLUTION: On an n-GaAs substrate 1, an n-Al<SB>z1</SB>Ga<SB>1-z1</SB>As lower clad layer 2 is grown at 700°C. An n- or i-In<SB>0.49</SB>Ga<SB>0.51</SB>P lower optical waveguide layer 3 is grown at the temperature reduced from 700°C to 650°C. An In<SB>x2</SB>Ga<SB>1-x2</SB>As<SB>1-y2</SB>P<SB>y2</SB>tensile strain barrier layer 4, a compression strained In<SB>x3</SB>Ga<SB>1-x3</SB>As<SB>1-y3</SB>P<SB>y3</SB>quantum well active layer 5, and an In<SB>x2</SB>Ga<SB>1-x2</SB>As<SB>1-y2</SB>P<SB>y2</SB>tensile strained barrier layer 6 are grown at 650°C. A p- or i-In<SB>0.49</SB>Ga<SB>0.51</SB>P upper optical waveguide layer 7 is grown at the growth temperature raised from 650°C to 700°C, gradually reducing a band gap of the lower optical waveguide layer from the lower clad layer side towards the active layer side, while gradually increasing a band gap of the upper optical guide layer from the active layer side towards the upper clad layer side. COPYRIGHT: (C)2003,JPO
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