发明名称 SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing device and a substrate processing method which can inject liquid drips having a desired temperature on the substrate surface and can improve the substrate processing efficiency thereby. SOLUTION: The substrate processing device treats a surface of a wafer W by injecting the liquid drips formed by mixing gas and liquid on the surface of the wafer W. The device is provided with a soft spray nozzle 21 that forms the liquid drips by mixing the gas and the liquid and injects the liquid drips on the surface of the substrate, an etching liquid supplying pipe 220 and a rinsing liquid supplying pipe 221 to supply the etching liquid and the rinsing liquid each to the soft spray nozzle 21, and a nitrogen gas supplying pipe 222 to supply the nitrogen gas to the soft spray nozzle 21. Each of the etching liquid supplying pipe 220, the rinsing liquid supplying pipe 221, and the nitrogen gas supplying pipe 222 is provided with temperature controllers 220b, 221b and 222b, respectively. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003197597(A) 申请公布日期 2003.07.11
申请号 JP20010394445 申请日期 2001.12.26
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 WADA TAKUYA
分类号 G02F1/13;B05B7/06;B05B7/16;B05D1/02;B08B3/02;B08B5/00;H01L21/304;(IPC1-7):H01L21/304 主分类号 G02F1/13
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