| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, having a reliable silicide layer of low resistance, by eliminating a leakage current in a path by a residual metal on a sidewall by silicidization. SOLUTION: An insulating film sidewall is formed on a conductive member composed of a polysilicon layer formed on a semiconductor wafer (step 1). A metal film for silicidizing is deposited on the principal surface of the wafer through sputtering, while including the surface of the conductive member (step 2). Then, the metal film is silicidized by a primary anneal process (step 3). Afterwards, a non-reacting metal on the wafer is removed by an RCA solution, while this wet etching process has the process of ultrasonically removing the residue to be removed by applying ultrasonic waves during a prescribed time from right before the end. Namely, the wafer is cleaned by applying the ultrasonic waves in the same bath right before the end from simple immersion in the RCA solution and is drawn out. COPYRIGHT: (C)2003,JPO
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