| 发明名称 |
DIODE HAVING VERTICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A light emitting diode includes a conductive layer, an n-GaN 105 layer on the conductive layer, an active layer 160 on the n-GaN layer, a p-GaN 140 layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode. |
| 申请公布号 |
WO03038874(A8) |
申请公布日期 |
2003.07.10 |
| 申请号 |
WO2002US33358 |
申请日期 |
2002.10.21 |
| 申请人 |
ORIOL, INC.;YOO, MYUNG, CHEOL |
发明人 |
YOO, MYUNG, CHEOL |
| 分类号 |
H01L33/00;H01L33/32;H01L33/40 |
主分类号 |
H01L33/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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