| 摘要 |
The first and second surfaces (3, 4) of a first wafer (1) are recessed (2, 5) forming penetrations between them, over the entire first surface of the first wafer. A temperature-stable, detachable connection (21) is formed between them, with spacing layers (13-15) of dielectric, uniting the first surface of the first wafer with a first surface of the second wafer, by wafer-bonding connection. An Independent claim is included for a corresponding method of forming a detachable, highly-temperature stable bond between two wafers.
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