发明名称 Method for eliminating corner round profile of the RELACS process
摘要 Forming a patterned photoresist over the substrate, herein numerous ions are formed during the formation of the patterned photoresist. Treat the patterned photoresist to increase the ions density at the top of the patterned photoresist. Cover the patterned photoresist by a reactive layer, wherein the reaction between the reactive layer and the ions forms a crosslinked layer over the surface of the patterned photoresist. And remove non-crosslinked portions of the reactive layer. Moreover, the treatment of the patterned photoresist could be heat the pattered photoresist or illuminate the patterned photoresist. Besides, the treatment also could be performed after the reactive layer is covered.
申请公布号 US2003129538(A1) 申请公布日期 2003.07.10
申请号 US20020040361 申请日期 2002.01.09
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 SHEU WEI-HWA;LIN SHUN-LI
分类号 G03F7/40;(IPC1-7):G03C5/00 主分类号 G03F7/40
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