| 摘要 |
In a semiconductor device in which an LSI chip comprising electrodes with a 100 mum pitch or less and 50 or more pins is mounted directly on an organic substrate, a mounting structure and a manufacturing method thereof are provided excellent in the solder resistant reflow property, temperature cycle reliability and high temperature/high humidity reliability of the semiconductor device. Electrode Au bumps of the chip and an Au film at the uppermost surface of connection terminals of the substrate are directly flip-chip bonded by Au/Au metal bonding and the elongation of the bonded portion of the Au bump is 2 mum or more. The method of obtaining the bonded structure involves a process of supersonically bonding both of the bonding surfaces within 10 min after sputter cleaning, under the bonding conditions selected from room temperature on the side of the substrate, room temperature to 150° C. on the side of the chip, a bonding load of ½Sx100 MPa to Sx180 MPa (S: contact area between bump and chip), a loading mode increasing during bonding, and supersonic application time of 50 to 500 ms.
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