发明名称 |
Method of forming a self-aligned twin well structrue with a single mask |
摘要 |
An improved method for forming a self-aligned twin well structure for use in a CMOS semiconductor device including providing a substrate for forming a twin well structure therein; forming an implant masking layer over the substrate to include a process surface said masking layer patterned to expose a first portion of the process surface for implanting ions; subjecting the first portion of the process surface to a first ion implantation process to form a first doped region included in the substrate; forming an implant blocking layer including a material that is selectively etchable to the implant masking layer over the first portion of the process surface; removing the implant masking layer to expose a second portion of the process surface; and, subjecting the second portion of the process surface to a second ion implantation process to form a second doped region disposed adjacent to the first doped region.
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申请公布号 |
US2003129540(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
US20020043861 |
申请日期 |
2002.01.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
SHEU YI-MING;YANG FU-LIANG |
分类号 |
G03F7/00;G03F7/26;H01L21/425;H01L21/8238;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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