Aluminum nitride ceramics, members for use in a system for producing semiconductors, and corrosion resistant members

摘要

It is an object of the present invention to increase the volume resistivity of an aluminum nitride ceramics. An aluminum nitride ceramics contains 0.5 to 10 weight percent of boron atoms and 0.1 to 2.5 weight percent of carbon atoms and having a volume resistivity at room temperature of not lower than 1x1014 OMEGA.cm. Alternatively, the ceramics has a volume resistivity at 500° C. of not lower than 1x108 OMEGA.cm. Alternatively, an aluminum nitride ceramics has an a-axis lattice constant of aluminum nitride not shorter than 3.112 angstrom and a c-axis lattice constant of aluminum nitride not shorter than 4.980 angstrom.