发明名称 |
Solid-state imaging device |
摘要 |
The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate; a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
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申请公布号 |
US2003127667(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
US20020287707 |
申请日期 |
2002.11.05 |
申请人 |
INOUE IKUKO;YAMASHITA HIROFUMI;NOZAKI HIDETOSHI |
发明人 |
INOUE IKUKO;YAMASHITA HIROFUMI;NOZAKI HIDETOSHI |
分类号 |
H01L27/146;H04N1/028;H04N5/335;H04N5/367;H04N5/369;H04N5/374;(IPC1-7):H01L29/768 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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