The invention concerns a monolithic phase-shifting panel with polycrystalline silicon PIN diodes, integrated in a dielectric substrate, for electronic scanning antenna. The invention is characterized in that the incorporation of diode-type control elements (not hybridized as in prior art) made of performing material (polycrystalline silicon) enables inexpensive design of phase-shifting panels with large numbers of two-state semiconductor elements, which constitutes an essential parameter for active antennae intended for quasi-mainstream applications.
申请公布号
WO03056659(A1)
申请公布日期
2003.07.10
申请号
WO2002FR04274
申请日期
2002.12.10
申请人
THALES;PRIBAT, DIDIER;HUET, ODILE;SCHNELL, JEAN-PHILIPPE;LAMOUR, FREDERIC;WOLK, IVAN
发明人
PRIBAT, DIDIER;HUET, ODILE;SCHNELL, JEAN-PHILIPPE;LAMOUR, FREDERIC;WOLK, IVAN