METHOD FOR MANUFACTURING DUAL GATE OXIDE LAYER

摘要

PURPOSE: A method for forming a dual gate oxide layer is provided to be capable of reducing processing time and improving reliability by removing photoresist by using a thinner-based etchant. CONSTITUTION: A field oxide layer(15) is formed at a semiconductor substrate for defining a cell and peripheral region. The first gate oxide layer is formed on the entire surface of the resultant structure. By using a photoresist layer for exposing the first gate oxide layer of the peripheral region, the exposed first gate oxide layer is selectively etched. The photoresist layer is removed by using a thinner-based etchant. After cleaning the resultant structure, dual gate oxide layers(25-1,35-1) are formed on the cell and peripheral region, respectively.