发明名称 |
Semiconductor memory device having resistor and method of fabricating the same |
摘要 |
A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A storage node layer is formed on the mold layer as well as in the first and second molding holes. The storage node layer is patterned to form storage nodes in the first molding holes and a portion of a resistor in the second hole.
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申请公布号 |
US2003127705(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
US20020272670 |
申请日期 |
2002.10.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAK DONG-HWA;KIM BYUNG-SEO |
分类号 |
H01L21/108;H01L21/8242;H01L27/06;H01L27/105;H01L27/108;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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