| 摘要 |
A nitride ready only memory cell with two top oxide layers and the method for manufacturing the same are disclosed. By high temperature oxidation (HTO), a more oxide layer is deposited on the floating gate of the ONO structure (Oxide-Nitride-Oxide structure) as a protecting layer so as to prevent the charges trapped in the silicon nitride layer of the ONO floating gate from being discharged between a polysilicon layer and a nitride layer so as to increase the reliability of the memory.
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