| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to be capable of improving electro migration and stress migration by implanting titanium ions into a copper film. CONSTITUTION: An insulating layer(40) is formed on a semiconductor substrate(10) having a lower metal line(20). A via hole and a trench are formed by selectively etching the insulating layer. A barrier layer(70a) and a copper film are sequentially formed on the insulating layer including the via hole and the trench. Titanium ions are implanted into the copper film and annealed. By selectively etching the copper film, a copper alloy interconnection(80a) is then formed. Then, a diffusion barrier layer(90) is formed on the resultant structure.
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