| 摘要 |
<p>The invention concerns a monolithic phase-shifting panel with polycrystalline silicon PIN diodes, integrated in a dielectric substrate, for electronic scanning antenna. The invention is characterized in that the incorporation of diode-type control elements (not hybridized as in prior art) made of performing material (polycrystalline silicon) enables inexpensive design of phase-shifting panels with large numbers of two-state semiconductor elements, which constitutes an essential parameter for active antennae intended for quasi-mainstream applications.</p> |
