发明名称 |
NEGATIVE DIFFERENTIAL RESISTANCE FIELD EFFECT TRANSISTOR (NDR-FET) & CIRCUITS USING THE SAME |
摘要 |
An improved negative differential resistance field effect transistor (NDR-FET) is disclosed. The NDR-FET includes a charge trapping layer formed at or extremely near to an interface between a substrate (which can be silicon or SOI) and a gate insulation layer. In this fashion, charge traps can be optimized for extremely rapid trapping and de-trapping of charge because they are extremely close to a channel of hot carriers. The NDR-FET is also useable as a replacement for conventional NDR diode and similar devices in memory cells, and enables an entire family of logic circuits that only require a single channel technology (i.e., instead of CMOS) and yet which provide low power.
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申请公布号 |
WO03056628(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
WO2002US41333 |
申请日期 |
2002.12.19 |
申请人 |
PROGRESSANT TECHNOLOGIES, INC.;KING, TSU-JAE |
发明人 |
KING, TSU-JAE |
分类号 |
H01L21/8234;G11C5/14;G11C11/39;H01L21/28;H01L21/8244;H01L21/8247;H01L27/088;H01L27/11;H01L27/115;H01L29/66;H01L29/78;H01L29/786;H01L29/788;H01L29/792;(IPC1-7):H01L29/06;H01L29/94;H01L31/058;H01L31/032;H01L31/033 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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