发明名称 Exchange coupling film, magneto-resistance effect device, magnetic head, and magnetic random access memory
摘要 A foundation layer increasing adhesive properties to a substrate, another foundation layer controlling orientation of an antiferromagnetic layer, the antiferromagnetic layer including a disordered alloy of IrMn, a pinning layer, and a cap protection layer are formed in the order on the substrate. The pinning layer includes two layers having an exchange coupling giving layer which exchange-couples to the antiferromagnetic layer and an exchange coupling enhancement layer which enhances the exchange coupling, the exchange coupling giving layer is made of a ferromagnetic material including Co or a Co100-XFeX alloy (O<=X<25) having face-centered cubic structure. The exchange coupling enhancement layer is made of Fe or a Co100-YFeY alloy (25<=Y<=100) having body-centered cubic structure.
申请公布号 US2003128483(A1) 申请公布日期 2003.07.10
申请号 US20020255847 申请日期 2002.09.26
申请人 NEC CORPORATION 发明人 KAMIJO ATSUSHI
分类号 G01R33/09;G11B5/39;G11C11/15;H01F10/16;H01F10/187;H01F10/32;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):G11B5/39 主分类号 G01R33/09
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