发明名称 |
Methods of forming MIM type capacitors by forming upper and lower electrode layers in a recess that exposes a source/drain region of a transistor and MIM capacitors so formed |
摘要 |
A MIM capacitor can be formed by forming an insulating layer on a source/drain region of a transistor. A First pattern is formed on the insulating layer. A recess is formed in the insulating layer Using the first pattern, wherein the recess exposes the source/drain region. A first electrode layer is formed in the recess on the source/drain region. A dielectric layer and a second electrode layer are formed on the first electrode layer in the recess. A second pattern id formed on the second electrode layer. The MIM capacitor is formed by removing a portion of the second electrode and the dielectric layer using the second pattern.
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申请公布号 |
US2003129805(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
US20020318817 |
申请日期 |
2002.12.13 |
申请人 |
KIM HONG-KI |
发明人 |
KIM HONG-KI |
分类号 |
H01L27/108;H01L21/02;H01L21/285;H01L21/8242;(IPC1-7):H01L21/824;H01L21/20 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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