Semiconductor device comprises a silicon carbide region having a contact surface, a continuous contact region remaining over the contact surface, and a contact material having a low melting point

摘要

Semiconductor device comprises a silicon carbide region (32) having a contact surface, a continuous contact region (50) remaining over the contact surface, and a contact material (34) having a low melting point and arranged in direct and continuous contact with the contact region. An Independent claim is also included for a process for the production of an electrical connection to the semiconductor device. Preferred Features: The contact material has a melting point which is less than or equal to 700 degrees C. The silicon carbide region is p-doped silicon carbide. The contact region is made from an alloy of aluminum and silicon carbide. The connection between the silicon carbide and the contact material is ohmic.