发明名称 |
Image sensor with performance enhancing structures |
摘要 |
An image sensor is disclosed including passivation walls extending above the pixel contact pads into a photosensor layer (e.g., amorphous silicon) such that the pixel contact pads are isolated to reduce cross-talk. The passivation walls are formed from SiO2 or SiON to further reduce cross-talk. An embodiment includes metal structures provided under interface regions (e.g., under the passivation walls) separating adjacent pixels that are negatively biased to prevent cross-talk, and optionally extend under the contact pad to increase pixel capacitance. One embodiment omits p-type dopant from the lower amorphous silicon photodiode layer, and additional photodiode material layers are disclosed. Another disclosed sensor structure utilizes a textured surface to increase light absorption. A color filter structure for image sensors is also disclosed.
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申请公布号 |
US2003127647(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
US20020042090 |
申请日期 |
2002.01.07 |
申请人 |
STREET ROBERT A.;BOYCE JAMES B.;KNIGHTS JOHN C. |
发明人 |
STREET ROBERT A.;BOYCE JAMES B.;KNIGHTS JOHN C. |
分类号 |
H01L27/146;(IPC1-7):H01L29/04 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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