| 摘要 |
PURPOSE: A method for forming a copper interconnection of a semiconductor device is provided to be capable of preventing defects of CMP, such as dishing and erosion by using a copper oxidizing agent without using abrasive. CONSTITUTION: After forming an oxide layer(10) on a semiconductor substrate, a via hole(15) and a trench(17) are formed by selectively etching the oxide layer. A barrier layer(20a) and a copper film are sequentially formed on the resultant structure including the via hole and the trench. The copper film is partially removed by the first CMP by using a copper oxidizing agent without using abrasive, and polished to expose the barrier layer by the second CMP by using the copper oxidizing agent. Then, the exposed barrier layer(20a) is removed by the third CMP in order to form a copper interconnection(30b).
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