Verbindungshalbleiter-Mehrschichtsstruktur und Bipolar-Transistor unter Verwendung derselben,申请号DE20011096596T-传众专利搜索

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发明名称	Verbindungshalbleiter-Mehrschichtsstruktur und Bipolar-Transistor unter Verwendung derselben
摘要
申请公布号	DE10196596(T1)	申请公布日期	2003.07.10
申请号	DE20011096596T	申请日期	2001.08.31
申请人	SHOWA DENKO K.K., TOKIO/TOKYO	发明人	OKANO, TAICHI;UDAGAWA, TAKASHI
分类号	C30B25/02;H01L29/15;H01L29/207;H01L29/737;(IPC1-7):H01L29/73	主分类号	C30B25/02
代理机构		代理人
主权项
地址

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