| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of reducing effective dielectric constant by using a gettering film instead of a barrier layer. CONSTITUTION: A metal line(120) is formed in the first interlayer dielectric(100). A gettering film(140) is formed on the first interlayer dielectric. The second interlayer dielectric(160), an etch stop layer(180) and the third interlayer dielectric(200) are sequentially stacked on the gettering film. A trench(210) and a via hole(170) are formed by selectively etching the third interlayer dielectric(200) and the second interlayer dielectric(160).
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