| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to easily bury a conductor in a fine contact hole without using a barrier metal film. CONSTITUTION: A method for forming a metal line of a semiconductor device includes the steps of forming an interleaving insulating film(12) having a contact hole, on a semiconductor substrate(11), inserting a resultant material of a semiconductor substrate(11) into a chamber, cleaning the material at a predetermined temperature, and forming a TiSi2 plug layer(13a) to be filled into the contact hole.
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