| 摘要 |
A high-density magnetic memory device and method of operating the same, wherein the high-density magnetic memory device includes a vertical transistor formed on a substrate, a magnetic memory element formed on the vertical transistor, the magnetic memory element using magnetic materials for storing data, a bit line connected to the vertical transistor via the magnetic memory element, a word line for writing over and across the bit line, and an insulating layer formed between the word line for writing and other components located below the word line for writing. According to the present invention, it is possible to fabricate a high-density magnetic memory device with a vertical transistor.
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