发明名称 Planarizing recess etch
摘要 A method of planarizing a circuit surface is disclosed. The basic idea is to use the photoresist mask for etching as the mask for lift-off, i.e. after the substrate patterned with photoresist and dry etched, metal is directly deposited onto it and liftoff afterwards. Thus, the deposited metal is self aligned and filled into the etched pattern with a planar surface. It is important that the metal thickness should be the same as the etching depth. The lithography needs a special recipe and photoresist requires a special pre-treatment so that the metal can form a clean edge without any residual metal along the edge. A prototype using this invention, a MEMS switch, is introduced.
申请公布号 US2003129843(A1) 申请公布日期 2003.07.10
申请号 US20020264704 申请日期 2002.10.04
申请人 CAI YONGMING;KATEHI LINDA P.B. 发明人 CAI YONGMING;KATEHI LINDA P.B.
分类号 B81C1/00;H01L21/027;H01L21/311;H01L21/321;(IPC1-7):H01L21/311 主分类号 B81C1/00
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