发明名称 |
SELECTIVE DEPOSITION OF A BARRIER LAYER ON A DIELECTRIC MATERIAL |
摘要 |
A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the dielectric material formed on the substrate in a process chamber. |
申请公布号 |
WO03056619(A2) |
申请公布日期 |
2003.07.10 |
申请号 |
WO2002US40179 |
申请日期 |
2002.12.17 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHUNG, HUA;CHEN, LING;KU, VINCENT, W.;YANG, MICHAEL, X.;YAO, GONGDA |
分类号 |
C23C16/34;C23C16/44;C23C16/455;H01L21/285;H01L21/768 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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