发明名称 SELECTIVE DEPOSITION OF A BARRIER LAYER ON A DIELECTRIC MATERIAL
摘要 A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the dielectric material formed on the substrate in a process chamber.
申请公布号 WO03056619(A2) 申请公布日期 2003.07.10
申请号 WO2002US40179 申请日期 2002.12.17
申请人 APPLIED MATERIALS, INC. 发明人 CHUNG, HUA;CHEN, LING;KU, VINCENT, W.;YANG, MICHAEL, X.;YAO, GONGDA
分类号 C23C16/34;C23C16/44;C23C16/455;H01L21/285;H01L21/768 主分类号 C23C16/34
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