METHOD FOR FORMING FUSE BOX OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fuse box of a semiconductor device is provided to be capable of improving the uniformity of an insulating layer located on a fuse irrespective of the position of a wafer. CONSTITUTION: The first insulating layer is formed on a substrate(100) having a fuse(101). After forming a barrier metal film(103) on the first insulating layer, the second insulating layer is formed on the resultant structure. The second insulating layer is selectively etched using the barrier metal film as an etch stop layer. After removing the exposed barrier metal film(103), the first insulating layer is partially etched to form a fuse box(110).