| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor memory device is provided to be capable of preventing bridge between lower electrodes and improving capacitance. CONSTITUTION: An insulating layer(53) is formed on a substrate(50) having a plug(52). A contact hole is formed to expose the plug. A barrier layer(54) is formed at sides of the insulating layer. A lower electrode is formed and an MPS(Metastable PolySilicon) layer(56) is formed on the lower electrode. A buried layer is filled into the contact hole. After isolating the lower electrodes, the buried layer is removed by wet-etching. A dielectric film(58) and an upper electrode(59) are sequentially formed on the lower electrode.
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