| 摘要 |
An alignment mark structure according to the present invention includes alignment marks (8) and underlying layers (5) arranged under the alignment marks (8). The underlying layers (5) each form a line for defining a pattern. A metal diffusion preventing and etching stopper layer (6) is interposed between the underlying layers (5) and the alignment marks (8). As the underlying layers (5) each form a line, dishing therein can be suppressed even when the underlying layers (5) are formed through a damascene process. As a result, there occurs no difference in level between the alignment marks (8) that may result in deterioration in alignment accuracy. Further, due to existence of the metal diffusion preventing and etching stopper layer (6), metallic material for forming the underlying layers (5) can be prevented from diffusing resulting from a thermal processing, for example.
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