摘要 |
PROBLEM TO BE SOLVED: To provide a method manufacturing for a boron nitride nanostructure such as a BN nanotube inexpensively, easily and at a high formation rate. SOLUTION: The boron nitride nanostructure is manufactured by melting a boron containing material in the presence of nitrogen, which contains boron and one or more kinds of elements selected from the group consisting of yttrium, niobium, and zirconium. Melting of the boron containing material is conducted, for example, by arc melting. COPYRIGHT: (C)2003,JPO
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