发明名称 |
ELECTRICALLY PROGRAMMED MOS TRANSISTOR SOURCE/DRAIN SERIES RESISTANCE |
摘要 |
High-speed MOS transistors are provided by forming a conductive layer embedded in transistor gate sidewall spacers. The embedded conductive layer is electrically insulated from the gate electrode and the source/drain regions of the transistor. The embedded conductive layer is positioned over the source/drain extensions and causes charge to accumulate in the source/drain extensions lowering the series resistance of the source/drain regions. |
申请公布号 |
AU2002359842(A1) |
申请公布日期 |
2003.07.09 |
申请号 |
AU20020359842 |
申请日期 |
2002.12.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
JAMES, F. BULLER;QI XIANG;DERICK, J. WRISTERS |
分类号 |
H01L21/8238;H01L21/336;H01L27/092;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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