Architecture of a phase-change nonvolatile memory array

摘要

The phase-change nonvolatile memory array (8) is formed by a plurality of memory cells (10, 10') extending in a first and in a second direction orthogonal to each other. A plurality of column-selection lines (11) extend parallel to the first direction. A plurality of word-selection lines (12) extend parallel to the second direction. Each memory cell (10, 10') includes a PCM storage element (15) and a selection transistor (16). A first terminal of the selection transistor is connected to a first terminal of the PCM storage element, and the control terminal of the selection transistor is connected to a respective word-selection line (12). A second terminal of the PCM storage element (15) is connected to a respective column-selection line (11), and a second terminal of the selection transistor (16) is connected to a reference-potential region (18) while reading and programming the memory cells (10, 10').