| 摘要 |
PROBLEM TO BE SOLVED: To provide a solution raw material for organommetallic chemical vapor deposition which contains aβ-diketonate complex of copper (II) having excellent thermal stability, hard to be decomposed in a preserved state, and having an elongated service life, and hardly corrodes an MOCVD (metal organic chemical vapor deposition) system, and does not complicate gas exhausting treatment, and to provide a copper thin film of high purity which is firmly stuck with a base film. SOLUTION: The solution raw material for an organometallic chemical vapor deposition process is obtained by dissolving aβ-diketonate complex of copper (II) shown by the formula (1): wherein, R is an isopropyl group into an organic solvent, concretely one or more kinds of compounds selected from the group consisting of saturated hydrocarabon, alcohol, cyclic ether, and ester compounds. COPYRIGHT: (C)2003,JPO
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